- Series :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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1,189
Ships today + free overnight shipping
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Infineon Technologies | DIODE GEN PURP 650V 60A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | TO-247-3 | Standard | 60A | 1.7V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 115ns | -40°C ~ 175°C | - | |||
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1,124
Ships today + free overnight shipping
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Infineon Technologies | DIODE SCHOTTKY 650V 30A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 220µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 860pF @ 1V, 1MHz | |||
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2,435
Ships today + free overnight shipping
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Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 1.7V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 64ns | -40°C ~ 175°C | - |
