- Series :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
13 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,474
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Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO247-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 580pF @ 1V, 1MHz | ||
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3,311
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Microsemi Corporation | DIODE SCHOTTKY 1700V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 23A (DC) | 1.8V @ 10A | 200µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1120pF @ 0V, 1MHz | ||
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1,098
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Microsemi Corporation | DIODE SCHOTTKY 1200V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 630pF @ 1V, 1MHz | ||
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2,337
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Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | ||
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1,654
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Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 10A TO220-2 | Zero Recovery™ | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 31A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1000pF @ 0V, 1MHz | ||
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2,603
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 16.5A TO263 | - | Obsolete | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | Silicon Carbide Schottky | 16.5A | 1.8V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 550pF @ 0V, 1MHz | ||
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3,978
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 16.5A TO220 | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 16.5A | 1.8V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 550pF @ 0V, 1MHz | ||
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779
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Cree/Wolfspeed | DIODE SCHOTTKY 1200V 10A | Z-Rec® | Obsolete | - | Surface Mount | Die | Die | Silicon Carbide Schottky | 31A (DC) | 1.8V @ 10A | 200µA @ 10A | - | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1000F @ 0V, 1MHz | ||
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3,048
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Infineon Technologies | DIODE SCHOTTKY 1.2KV 7.5A TO247 | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 Variant | PG-TO247HC-3 | Silicon Carbide Schottky | 7.5A (DC) | 1.8V @ 10A | 180µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 375pF @ 1V, 1MHz | ||
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3,245
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Infineon Technologies | DIODE SCHOTTKY 1.2KV 5A TO247HC | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 Variant | PG-TO247HC-3 | Silicon Carbide Schottky | 5A (DC) | 1.8V @ 10A | 120µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | ||
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607
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ON Semiconductor | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack | TO-220F-2L | Standard | 10A | 1.8V @ 10A | 15µA @ 1500V | 1500V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 150°C | - | ||
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1,310
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 36A TO247 | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 36A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 600pF @ 0V, 1MHz | |||
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3,342
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Microsemi Corporation | DIODE SILICON 650V 17A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-2 | TO-220 [K] | Silicon Carbide Schottky | 17A | 1.8V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 300pF @ 1V, 1MHz |
