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- Package / Case :
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- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
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3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | |
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2,978
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Infineon Technologies | DIODE GEN PURP 650V 30A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | Standard | 30A (DC) | 2.2V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 42ns | -40°C ~ 175°C | ||||
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2,412
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Infineon Technologies | DIODE GEN PURP 650V 60A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Standard | 60A (DC) | 2.2V @ 30A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 42ns | -40°C ~ 175°C | ||||
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2,601
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ON Semiconductor | DIODE GEN PURP 600V 30A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 Full Pack | TO-220F-2L | Standard | 30A | 2.2V @ 30A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 90ns | -65°C ~ 150°C |