- Part Status :
- Package / Case :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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3,404
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Rohm Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220AC | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 20A | 1.75V @ 20A | 400µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 1300pF @ 1V, 1MHz | ||||
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2,139
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Global Power Technologies Group | DIODE SCHOTTKY 1.7KV 20A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 20A (DC) | 1.75V @ 20A | 40µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1624pF @ 1V, 1MHz | |||
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1,643
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 30A TO247-2 | - | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.75V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | 1220pF @ 1V, 100KHz | ||||
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711
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 20A | 1.75V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1220pF @ 1V, 100KHz |