- Series :
- Package / Case :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
11 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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1,575
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WeEn Semiconductors | DIODE SCHOTTKY 650V 8A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 230µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 260pF @ 1V, 1MHz | ||
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3,982
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Infineon Technologies | DIODE SCHOTTKY 650V 8A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 280µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | ||
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3,653
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 300µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 280pF @ 0V, 1MHz | ||
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883
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Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | ||
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2,827
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 8A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 44pF @ 650V, 1MHz | |||
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3,511
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STMicroelectronics | DIODE SCHOTTKY 600V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 450pF @ 0V, 1MHz | |||
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3,512
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 8A TO220-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 477pF @ 1V, 1MHz | ||
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2,034
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WeEn Semiconductors | DIODE SCHOTTKY 650V 8A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 230µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 260pF @ 1V, 1MHz | ||
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2,624
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Infineon Technologies | DIODE SCHOTTKY 650V 8A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 140µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | |||
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3,483
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Rohm Semiconductor | DIODE SCHOTTKY 600V 8A TO220AC | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 160µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 345pF @ 1V, 1MHz | |||
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1,556
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Littelfuse Inc. | DIODE SIC SCHOTTKY 650V 8A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 230µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 260pF @ 1V, 1MHz |
