- Packaging :
- Current - Reverse Leakage @ Vr :
12 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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2,604
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 5A P600 | - | Obsolete | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
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3,959
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 5A P600 | - | Obsolete | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
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3,284
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 5A P600 | - | Obsolete | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
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2,333
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 5A P600 | - | Obsolete | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
|
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3,746
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 5A P600 | - | Obsolete | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
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2,430
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 5A P600 | - | Obsolete | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
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1,988
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 5A P600 | - | Obsolete | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
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1,664
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 5A P600 | - | Obsolete | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
|
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2,031
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 5A P600 | - | Obsolete | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
|
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859
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 5A P600 | - | Obsolete | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
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1,338
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 5A P600 | - | Obsolete | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz | |||
|
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1,276
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 5A P600 | - | Obsolete | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 5A | 1.1V @ 5A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 150°C | 300pF @ 4V, 1MHz |