- Part Status :
- Packaging :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,845
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 10A P600 | - | Obsolete | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 10A | 1.05V @ 10A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C | 110pF @ 4V, 1MHz | ||
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GET PRICE |
3,908
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 10A P600 | - | Obsolete | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 10A | 1.05V @ 10A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | -55°C ~ 175°C | 110pF @ 4V, 1MHz | ||
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3,425
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 1V @ 6A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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2,618
Ships today + free overnight shipping
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 6A P600 | - | Active | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 6A | 1V @ 6A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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2,188
Ships today + free overnight shipping
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 6A P600 | - | Active | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 6A | 1V @ 6A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 150pF @ 4V, 1MHz |
