- Part Status :
- Packaging :
- Package / Case :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
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21 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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3,469
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WeEn Semiconductors | DIODE GEN PURP 600V 9A TO220F | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Standard | 9A | 1.3V @ 8A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | 175°C (Max) | - | |||
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1,816
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WeEn Semiconductors | DIODE SCHOTTKY 650V 10A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | |||
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1,575
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WeEn Semiconductors | DIODE SCHOTTKY 650V 8A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 230µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 260pF @ 1V, 1MHz | |||
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2,518
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 6A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 6A | 1.7V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 190pF @ 1V, 1MHz | |||
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2,449
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WeEn Semiconductors | DIODE SCHOTTKY 650V 4A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | |||
|
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3,109
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WeEn Semiconductors | DIODE GEN PURP 600V 30A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Standard | 30A | 1.55V @ 30A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | 175°C (Max) | - | |||
|
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2,824
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|
WeEn Semiconductors | DIODE GEN PURP 600V 15A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack | TO-220F | Standard | 15A | 1.38V @ 15A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | 175°C (Max) | - | |||
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3,260
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|
WeEn Semiconductors | DIODE GEN PURP 800V 8A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack | TO-220F | Standard | 8A | 1.7V @ 8A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 55ns | 175°C (Max) | - | |||
|
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2,315
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|
WeEn Semiconductors | DIODE GEN PURP 600V 20A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Standard | 20A | 2.9V @ 20A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 20ns | 175°C (Max) | - | |||
|
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759
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WeEn Semiconductors | DIODE GEN PURP 600V 5A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Standard | 5A | 3.3V @ 5A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 25ns | -65°C ~ 175°C | - | |||
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893
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | ||||
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1,541
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | ||||
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1,476
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | ||||
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1,155
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 430pF @ 0V, 1MHz | ||||
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3,301
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 430pF @ 0V, 1MHz | ||||
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2,268
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 3A (DC) | 1.7V @ 3A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 190pF @ 0V, 1MHz | ||||
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1,559
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 3A (DC) | 1.7V @ 3A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 190pF @ 0V, 1MHz | ||||
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947
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | ||||
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3,836
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ON Semiconductor | DIODE GEN PURP 600V 20A TO220F | - | Active | Cut Tape (CT) | Through Hole | TO-220-2 | TO-220F | Standard | 20A | 1.75V @ 20A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | 150°C (Max) | - | ||||
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1,421
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WeEn Semiconductors | DIODE GEN PURP 600V 15A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Standard | 15A | 3.2V @ 15A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 18ns | 175°C (Max) | - | ||||
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2,691
Ships today + free overnight shipping
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Sanken | DIODE SCHOTTKY 600V 20A TO220-2 | - | Last Time Buy | Tube | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 20A | 1.5V @ 10A | 15mA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | - |