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23 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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3,592
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Infineon Technologies | DIODE SCHOTTKY 1200V 15A TO247-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 15A (DC) | 1.8V @ 15A | 305µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 870pF @ 1V, 1MHz | |||
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2,474
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|
Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO247-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 580pF @ 1V, 1MHz | |||
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3,561
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|
Infineon Technologies | DIODE SCHOTTKY 650V 20A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 700µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 590pF @ 1V, 1MHz | |||
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3,499
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|
Infineon Technologies | DIODE SCHOTTKY 650V 16A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 600µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 1V, 1MHz | |||
|
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1,651
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|
Infineon Technologies | DIODE SCHOTTKY 650V 12A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 500µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | |||
|
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1,408
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 400µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
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3,145
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|
Infineon Technologies | DIODE SCHOTTKY 650V 40A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Bulk | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 40A (DC) | 1.7V @ 40A | 1.4mA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1140pF @ 1V, 1MHz | |||
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2,639
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|
Infineon Technologies | DIODE SCHOTTKY 650V 30A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 1.1mA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 860pF @ 1V, 1MHz | |||
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1,120
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Infineon Technologies | DIODE SCHOTTKY 650V 12A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 190µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | ||||
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2,363
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | ||||
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1,642
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|
Infineon Technologies | DIODE SCHOTTKY 650V 16A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 1V, 1MHz | ||||
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3,044
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Infineon Technologies | DIODE GEN PURP 600V 80A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Standard | 80A (DC) | 2V @ 50A | 40µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 115ns | -40°C ~ 175°C | - | ||||
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3,384
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Infineon Technologies | DIODE SCHOTTKY 650V 12A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 12A (DC) | 1.7V @ 12A | 190µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 360pF @ 1V, 1MHz | ||||
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2,421
Ships today + free overnight shipping
|
Infineon Technologies | DIODE SCHOTTKY 650V 20A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 210µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 590pF @ 1V, 1MHz | ||||
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2,615
Ships today + free overnight shipping
|
Infineon Technologies | DIODE SCHOTTKY 650V 40A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 40A (DC) | 1.7V @ 40A | 220µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1140pF @ 1V, 1MHz | ||||
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2,845
Ships today + free overnight shipping
|
Infineon Technologies | DIODE SCHOTTKY 650V 20A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 20A (DC) | 1.7V @ 20A | 210µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 590pF @ 1V, 1MHz | ||||
|
2,000
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | ||||
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2,207
Ships today + free overnight shipping
|
Infineon Technologies | DIODE GEN PURP 600V 120A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Standard | 120A (DC) | 2V @ 75A | 40µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 121ns | -55°C ~ 175°C | - | ||||
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3,758
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|
Infineon Technologies | DIODE GEN PURP 650V 30A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Standard | 30A | 2.3V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 47ns | -40°C ~ 175°C | - | ||||
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1,929
Ships today + free overnight shipping
|
Infineon Technologies | DIODE SCHOTTKY 650V 16A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 1V, 1MHz | ||||
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1,124
Ships today + free overnight shipping
|
Infineon Technologies | DIODE SCHOTTKY 650V 30A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 220µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 860pF @ 1V, 1MHz | ||||
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2,349
Ships today + free overnight shipping
|
Infineon Technologies | DIODE GEN PURP 600V 150A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Standard | 150A (DC) | 2V @ 100A | 40µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 120ns | -55°C ~ 175°C | - | ||||
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3,901
Ships today + free overnight shipping
|
Infineon Technologies | DIODE GEN PURP 650V 150A TO247-3 | - | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Standard | 150A (DC) | 1.7V @ 75A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 108ns | -40°C ~ 175°C | - |