- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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1,876
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Infineon Technologies | DIODE GEN PURP 650V 8A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Standard | 8A | 1.7V @ 8A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 80ns | -40°C ~ 175°C | - | |||
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953
Ships today + free overnight shipping
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Infineon Technologies | DIODE GEN PURP 600V 8A TO220AC | HEXFRED® | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 8A | 1.7V @ 8A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | -55°C ~ 150°C | - |
