- Package / Case :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,849
Ships today + free overnight shipping
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Comchip Technology | DIODE GEN PURP 1KV 3A DO201AA | - | Active | Bulk | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1.7V @ 3A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 125°C | 30pF @ 4V, 1MHz | |||
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2,615
Ships today + free overnight shipping
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Comchip Technology | DIODE GEN PURP 1KV 3A DO201AA | - | Active | Bulk | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1.7V @ 3A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 125°C | 30pF @ 4V, 1MHz | |||
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2,138
Ships today + free overnight shipping
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Comchip Technology | DIODE GEN PURP 1KV 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | |||
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3,954
Ships today + free overnight shipping
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Comchip Technology | DIODE GEN PURP 1KV 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | |||
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3,685
Ships today + free overnight shipping
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Comchip Technology | DIODE GEN PURP 1KV 1A DO41 | - | Active | Bulk | Through Hole | DO-204AL, DO-41, Axial | DO-41 | Standard | 1A | 1.1V @ 1A | 5µA @ 1000V | 1000V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz |
